Black silicon for near-infrared and ultraviolet photodetection: A review

As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as substitute for standard in photoelectric devices. Black overcomes the limitations traditional silicon-based devices, which are unable to achieve infrared detection at wavelengths >1100 nm have low quantum efficiency sensitivity ultraviolet detection. In this article, recent theoretical experimental breakthroughs near-infrared using summarized detail. First, techniques its fabrication introduced. Then, application enhanced photodetectors within or above bandgap limit fabricated different methods discussed. principle, achieved by jointly utilizing element doping, localized surface plasmon resonance effect, heterojunction formation. addition, also Ultraviolet realized an induced junction self-built electric field between aluminum oxide. Finally, increasingly growing potential applications, such night vision imaging, signal detection, intensity monitoring, national defense early warning, further